黄东,陈志达,龚泽鹏,吕晓哲,苗瑞霞

• 1:西安邮电大学电子工程学院

摘要(Abstract)：

为了降低低噪声放大器(Low Noise Amplifier, LNA)的噪声系数(Noise Figure, NF),提出了一种LNA衬底电阻噪声抑制方法。根据金属-氧化物半导体场效应晶体管(Metal-Oxide Semiconductor, MOS)的衬底寄生电阻在源衬电容间产生噪声电流的原理，利用MOS管衬底电阻的小信号模型得出衬底噪声电流在大于一定的衬底电阻阻值时存在反比关系，采用增大衬底电阻阻值方法来降低MOS管衬底电阻噪声，从而减小整体LNA的噪声系数。将此方法应用于共栅级、电阻负反馈共源级与源简并电感型共源级等3种LNA中，采用台积电0.18μm互补金属氧化物半导体工艺设计，仿真结果表明，应用降噪技术后，共栅级、源简并电感型共源级和电阻负反馈型共源级LNA的NF最高降幅分别为0.99 dB、1 dB与1.18 dB。所提方法能够有效降低LNA的NF,并且提高3种LNA的线性度。

关键词(KeyWords)： 射频;低噪声放大器;金属-氧化物半导体场效应晶体管;噪声系数;衬底电阻

Abstract:

Keywords:

基金项目(Foundation): 陕西省自然科学基础研究计划项目(2020JQ-845)

作者(Author): 黄东,陈志达,龚泽鹏,吕晓哲,苗瑞霞

DOI: 10.13682/j.issn.2095-6533.2022.01.008

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